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                 PMEG3005ELD All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 12 April 2011 6 of 14 NXP Semiconductors PMEG3005ELD 0.5 A low VF MEGA Schottky barrier rectifier 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤0.02. [2] When switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR =1mA. Table 7. Characteristics Tamb =25°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage [1] IF = 0.1 mA - 90 180 mV IF = 1 mA - 150 200 mV IF = 10 mA - 210 270 mV IF = 100 mA - 300 360 mV IF = 500 mA - 450 500 mV IR reverse current VR = 10 V - 15 200 μA VR = 30 V - 80 500 μA Cd diode capacitance VR =1V; f=1MHz - 2130pF trr reverse recovery time [2] -6-ns (1) Tj = 150 °C (2) Tj = 125 °C (3) Tj =85°C (4) Tj =25°C (5) Tj = ?40 °C (1) Tj = 125 °C (2) Tj =85°C (3) Tj =25°C (4) Tj = ?40 °C Fig 5. Forward current as a function of forward voltage; typical values Fig 6. Reverse current as a function of reverse voltage; typical values 006aac548 10–2 10–3 1 10–1 10 IF (A) 10–4 VF (V) 0.0 0.90.3 0.6 (1) (2) (3) (4) (5) 006aac549 VR (V) 03010 20 10–1 IR (A) 10–2 10–3 10–4 10–5 10–6 10–7 10–8 (1) (2) (3) (4) |